Resistive Switching and Synaptic Behaviors of TaN/Al2O3/ZnO/ITO Flexible Devices With Embedded Ag Nanoparticles.

MLA

Wang, Da-Ting, et al. “Resistive Switching and Synaptic Behaviors of TaN/Al2O3/ZnO/ITO Flexible Devices With Embedded Ag Nanoparticles.” IEEE Electron Device Letters, vol. 37, no. 7, July 2016, pp. 878–81. EBSCOhost, https://doi.org/10.1109/LED.2016.2570279.

APA

Wang, D.-T., Dai, Y.-W., Xu, J., Chen, L., Sun, Q.-Q., Zhou, P., Wang, P.-F., Ding, S.-J., & Zhang, D. W. (2016). Resistive Switching and Synaptic Behaviors of TaN/Al2O3/ZnO/ITO Flexible Devices With Embedded Ag Nanoparticles. IEEE Electron Device Letters, 37(7), 878–881. https://doi.org/10.1109/LED.2016.2570279

Chicago

Wang, Da-Ting, Ya-Wei Dai, Jing Xu, Lin Chen, Qing-Qing Sun, Peng Zhou, Peng-Fei Wang, Shi-Jin Ding, and David Wei Zhang. 2016. “Resistive Switching and Synaptic Behaviors of TaN/Al2O3/ZnO/ITO Flexible Devices With Embedded Ag Nanoparticles.” IEEE Electron Device Letters 37 (7): 878–81. doi:10.1109/LED.2016.2570279.