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Nanogranular SiO2 proton gated silicon layer transistor mimicking biological synapses.
- Source :
- Applied Physics Letters; 6/20/2016, Vol. 108 Issue 25, p253503-1-253503-5, 5p, 4 Graphs
- Publication Year :
- 2016
-
Abstract
- Silicon on insulator (SOI)-based transistors gated by nanogranular SiO<subscript>2</subscript> proton conducting electrolytes were fabricated to mimic synapse behaviors. This SOI-based device has both top proton gate and bottom buried oxide gate. Electrical transfer properties of top proton gate show hysteresis curves different from those of bottom gate, and therefore, excitatory post-synaptic current and paired pulse facilitation (PPF) behavior of biological synapses are mimicked. Moreover, we noticed that PPF index can be effectively tuned by the spike interval applied on the top proton gate. Synaptic behaviors and functions, like short-term memory, and its properties are also experimentally demonstrated in our device. Such SOI-based electronic synapses are promising for building neuromorphic systems. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 108
- Issue :
- 25
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 116390268
- Full Text :
- https://doi.org/10.1063/1.4954761