Back to Search
Start Over
Toward the Atomically Abrupt Interfaces of SiO x/Semiconductor Junctions.
- Source :
- Advanced Materials Interfaces; 6/6/2016, Vol. 3 Issue 11, pn/a-n/a, 5p
- Publication Year :
- 2016
-
Abstract
- The article discusses research on the atomically abrupt interfaces of oxide/semiconductor junction (OSJ) that contain the prototypical silicon dioxide (SiO), film on indium gallium arsenide (GaInAs), gallium arsanide (GaAs), germanium (Ge) semiconductors through capacitance-voltage, photoluminescence and synchrotron-radiation photoelectron spectroscopy. The III-V semiconductor interaction with silicon was also investigated.
Details
- Language :
- English
- ISSN :
- 21967350
- Volume :
- 3
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Advanced Materials Interfaces
- Publication Type :
- Academic Journal
- Accession number :
- 115933973
- Full Text :
- https://doi.org/10.1002/admi.201500510