80 MeV C6+ Ion Irradiation Effects on the DC Electrical Characteristics of Silicon NPN Power Transistors.

Authors :: Bharathi, M. N.
Pushpa, N.
Vinayakprasanna, N. H.
Prakash, A. P. Gnana
Source :: AIP Conference Proceedings; 2016, Vol. 1731 Issue 1, p1-3, 3p, 7 Graphs
Publication Year :: 2016
Abstract: The total dose effects of 80 MeV C<superscript>6+</superscript> ions on the DC electrical characteristics of Silicon NPN rf power transistors have been studied in the dose range of 100 krad to 100 Mrad. The SRIM simulation was used to understand the energy loss and range of the ions in the transistor structure. The different electrical parameters such as Gummel characteristics, excess base current (ΔI<subscript>B</subscript>=I<subscript>Bpost</subscript> - I<subscript>Bpre</subscript>), dc forward current gain (h<subscript>FE</subscript>), transconductance (g<subscript>m</subscript>), displacement damage factor (K) and output characteristics (V<subscript>CE</subscript>-I<subscript>C</subscript>) were studied systematically before and after irradiation. The significant degradation in base current (I<subscript>B</subscript>) and hFE was observed after irradiation. Isochronal annealing study was conducted on the irradiated transistors to analyze the recovery in different electrical parameters. These results were compared with <superscript>60</superscript>C0 gamma irradiation results in the same dose range. [ABSTRACT FROM AUTHOR]

Subjects :: BIPOLAR transistors
POWER transistors
CARBON
SILICON
ELECTRIC properties of metals
ELECTRIC admittance

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