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Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy.
- Source :
- Journal of Low Temperature Physics; Jul2016, Vol. 184 Issue 1/2, p225-230, 6p
- Publication Year :
- 2016
-
Abstract
- We report the current status of the development of our new detectors for far-infrared (FIR) astronomy. We develop Blocked-Impurity-Band (BIB)-type Ge detectors to realize large-format compact arrays covering a wide FIR wavelength range up to 200 $$\upmu $$ m. We fabricated Ge junction devices of different physical parameters with a BIB-type structure, using the room temperature, surface-activated wafer bonding (SAB) method. We measured the absolute responsivity and the spectral response curve of each device at low temperatures, using an internal blackbody source in a cryostat and a Fourier transform spectrometer, respectively. The results show that the SAB Ge junction devices have significantly higher absolute responsivities and longer cut-off wavelengths of the spectral response than the conventional bulk Ge:Ga device. Based upon the results, we discuss the optimum parameters of SAB Ge junction devices for FIR detectors. We conclude that SAB Ge junction devices possess a promising applicability to next-generation FIR detectors covering wavelengths up to $$\sim $$ 200 $$\upmu $$ m with high responsivity. As a next step, we plan to fabricate a BIB-type Ge array device in combination with a low-power cryogenic readout integrated circuit. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00222291
- Volume :
- 184
- Issue :
- 1/2
- Database :
- Complementary Index
- Journal :
- Journal of Low Temperature Physics
- Publication Type :
- Academic Journal
- Accession number :
- 115657482
- Full Text :
- https://doi.org/10.1007/s10909-016-1484-1