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Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition.
- Source :
- 2016 Joint International EUROSOI Workshop & International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS); 2016, p32-35, 4p
- Publication Year :
- 2016
Details
- Language :
- English
- ISBNs :
- 9781467386098
- Database :
- Complementary Index
- Journal :
- 2016 Joint International EUROSOI Workshop & International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
- Publication Type :
- Conference
- Accession number :
- 115624205
- Full Text :
- https://doi.org/10.1109/ULIS.2016.7440045