Cite
ChemInform Abstract: Effects of Annealing Temperature on Microstructure and Electrical and Optical Properties of Radio-Frequency-Sputtered Tin-Doped Indium Oxide Films.
MLA
Na, J. G., et al. “ChemInform Abstract: Effects of Annealing Temperature on Microstructure and Electrical and Optical Properties of Radio-Frequency-Sputtered Tin-Doped Indium Oxide Films.” ChemInform, vol. 20, no. 31, Aug. 1989, p. no. EBSCOhost, https://doi.org/10.1002/chin.198931023.
APA
Na, J.-G., Cho, Y.-R., Kim, Y.-H., Lee, T.-D., & Park, S.-J. (1989). ChemInform Abstract: Effects of Annealing Temperature on Microstructure and Electrical and Optical Properties of Radio-Frequency-Sputtered Tin-Doped Indium Oxide Films. ChemInform, 20(31), no. https://doi.org/10.1002/chin.198931023
Chicago
Na, J.-G., Y.-R. Cho, Y.-H. Kim, T.-D. Lee, and S.-J. Park. 1989. “ChemInform Abstract: Effects of Annealing Temperature on Microstructure and Electrical and Optical Properties of Radio-Frequency-Sputtered Tin-Doped Indium Oxide Films.” ChemInform 20 (31): no. doi:10.1002/chin.198931023.