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Single-Event Upset Characterization Across Temperature and Supply Voltage for a 20-nm Bulk Planar CMOS Technology.
- Source :
- IEEE Transactions on Nuclear Science; Dec2015 Part 1, Vol. 62 Issue 6a, p2613-2619, 7p
- Publication Year :
- 2015
-
Abstract
- Isotropic alpha particle single-event upsets (SEU) in flip-flops are characterized over temperature and voltage supply variations in a 20-nm bulk planar complementary metal-oxide semiconductor (CMOS) process. The decrease of the MOSFET drain current in saturation with respect to increased temperature and reduced supply voltage explains the increased SEU sensitivity of the flip-flop designs. Experimental SEU cross sections from isotropic Americium-241, 5.4-MeV alpha particle show irradiation increases by 30\times on average, and up to orders of magnitude, as a result of increased device temperature and reduced supply voltage. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 62
- Issue :
- 6a
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 115132587
- Full Text :
- https://doi.org/10.1109/TNS.2015.2493886