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Effects of Proton-Induced Displacement Damage on Gallium Nitride HEMTs in RF Power Amplifier Applications.
- Source :
- IEEE Transactions on Nuclear Science; Dec2015 Part 1, Vol. 62 Issue 6a, p2417-2422, 6p
- Publication Year :
- 2015
-
Abstract
- The effects of proton-induced displacement damage in GaN HEMTs on circuit-level RF power amplifier parameters such as circuit gain, stability, and RF output power are presented. The results are explained based on the device-level degradation. Commercial-off-the-shelf GaN HEMTs from two manufacturers were compared. Differences are observed in both device and circuit level responses. Suggestions to mitigate the negative effects of displacement damage on GaN based amplifiers are also provided. [ABSTRACT FROM PUBLISHER]
- Subjects :
- PROTONS
GALLIUM nitride
POWER amplifiers
ELECTRON mobility
IONIZING radiation
Subjects
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 62
- Issue :
- 6a
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 115132543
- Full Text :
- https://doi.org/10.1109/TNS.2015.2499160