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Growth of InAlGaN Quaternary Alloys by Pulsed Metalorganic Chemical Vapor Deposition.
- Source :
- Chinese Physics Letters; Apr2016, Vol. 33 Issue 4, p1-1, 1p
- Publication Year :
- 2016
-
Abstract
- Epitaxial growth of InAlGaN/GaN structures are performed on the c-plane sapphire by pulsed metal organic chemical vapor deposition with different triethylgallium (TEGa) flows in the growth process of InAlGaN quaternary alloys. X-ray photoelectron spectroscopy results show that the Al/In ratio of the samples increases as the TEGa flows increase in the InAlGaN quaternary growth process. High-resolution x-ray diffraction results show that the crystal quality is improved with increasing TEGa flows. Morphology of the InAlGaN/GaN heterostructures is characterized by an atomic force microscopy, and the growth mode of the InAlGaN quaternary shows a 2D island growth mode. The minimum surface roughness is 0.20 nm with the TEGa flows equaling to 3.6 μmol/min in rms. Hall effect measurement results show that the highest electron mobility μ is 1005.49 cm<superscript>2</superscript> /Vs and the maximal two-dimensional electron gas is 1.63 × 10<superscript>13</superscript> cm<superscript>−2</superscript>. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 33
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 114594047
- Full Text :
- https://doi.org/10.1088/0256-307X/33/4/048101