Memristor and selector devices fabricated from HfO2–xNx.

Monoclinic HfO_2–xN_x has been incorporated into two-terminal devices exhibiting either memristor or selector operation depending on the controlled inclusion/suppression of mobile oxygen vacancies. In HfO₂ memristors containing oxygen vacancies, gradual conductance modulation, short-term plasticity, and long-term potentiation were observed using appropriate voltage-spike stimulation, suggesting suitability for artificial neural networks. Passivation of oxygen vacancies, confirmed by X-ray absorption spectroscopy, was achieved in HfO_2–xN_x films by the addition of nitrogen during growth. Selector devices formed on these films exhibited threshold switching and current controlled negative differential resistance consistent with thermally driven insulator to metal transitions. [ABSTRACT FROM AUTHOR]