Modification of "native" surface donor states in AlGaN/GaN MIS-HEMTs by fluorination: Perspective for defect engineering.

Details

Language :

English

ISBNs :

9781467398947

Database :

Complementary Index

Journal :

2015 IEEE International Electron Devices Meeting (IEDM)

Publication Type :

Conference

Accession number :

114303725

Full Text :

https://doi.org/10.1109/IEDM.2015.7409834