Capacitance characteristics of low-k low-cost CVD grown polyimide liner for high-density Cu through-Si-via in three-dimensional LSI.

MLA

Murugesan Mariappan, et al. “Capacitance Characteristics of Low-k Low-Cost CVD Grown Polyimide Liner for High-Density Cu through-Si-via in Three-Dimensional LSI.” Japanese Journal of Applied Physics, vol. 55, no. 4s, Apr. 2016, p. 1. EBSCOhost, https://doi.org/10.7567/JJAP.55.04EC12.

APA

Murugesan Mariappan, Takafumi Fukushima, Ji-Chel Bea, Hiroyuki Hashimoto, & Mitsumasa Koyanagi. (2016). Capacitance characteristics of low-k low-cost CVD grown polyimide liner for high-density Cu through-Si-via in three-dimensional LSI. Japanese Journal of Applied Physics, 55(4s), 1. https://doi.org/10.7567/JJAP.55.04EC12

Chicago

Murugesan Mariappan, Takafumi Fukushima, Ji-Chel Bea, Hiroyuki Hashimoto, and Mitsumasa Koyanagi. 2016. “Capacitance Characteristics of Low-k Low-Cost CVD Grown Polyimide Liner for High-Density Cu through-Si-via in Three-Dimensional LSI.” Japanese Journal of Applied Physics 55 (4s): 1. doi:10.7567/JJAP.55.04EC12.