Activation of Si implants into InAs characterized by Raman scattering.

MLA

Lind, A. G., et al. “Activation of Si Implants into InAs Characterized by Raman Scattering.” Journal of Applied Physics, vol. 119, no. 9, Mar. 2016, pp. 095705-1-095705-5. EBSCOhost, https://doi.org/10.1063/1.4942880.

APA

Lind, A. G., Martin, J. . T. P., Sorg, V. C., Kennon, E. L., Truong, V. Q., Aldridge, H. L., Hatem, C., Thompson, M. O., & Jones, K. S. (2016). Activation of Si implants into InAs characterized by Raman scattering. Journal of Applied Physics, 119(9), 095705-1-095705-5. https://doi.org/10.1063/1.4942880

Chicago

Lind, A. G., Jr., T. P. Martin, V. C. Sorg, E. L. Kennon, V. Q. Truong, H. L. Aldridge, C. Hatem, M. O. Thompson, and K. S. Jones. 2016. “Activation of Si Implants into InAs Characterized by Raman Scattering.” Journal of Applied Physics 119 (9): 095705-1-095705-5. doi:10.1063/1.4942880.