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Enhancement of Seebeck Coefficient in Bi Nanowires by Electric Field Effect.
- Source :
- Journal of Electronic Materials; Mar2016, Vol. 45 Issue 3, p1555-1560, 6p
- Publication Year :
- 2016
-
Abstract
- In this study, we investigated the electric field effect on the transport properties of a Bi nanowire. These effects were modeled by a surface potential. The electron states of Bi nanowires were numerically analyzed by effective mass equations at the T-point and L-point taking into account surface potential due to an external electric field. The Seebeck coefficients of Bi nanowires were calculated by using the Boltzmann equation with a constant relaxation time. It was found that the Seebeck coefficients increased when the sign of the surface potential parameter was negative. In particular, when the surface potential parameter was $$-$$ 1 eV and the skin depth was 10 nm in a 20-nm-diameter nanowire, the maximum absolute value of the Seebeck coefficient was larger than 1 mV/K, which was greatly improved compared to that without an external electric field. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03615235
- Volume :
- 45
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Journal of Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 113221371
- Full Text :
- https://doi.org/10.1007/s11664-015-4113-x