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Vapor phase conversion of PbI2 to CH3NH3PbI3: spectroscopic evidence for formation of an intermediate phase.

Authors :
Jain, Sagar Motilal
Johansson, Erik M. J.
Park, Byung-wook
Boschloo, Gerrit
Philippe, Bertrand
Rensmo, Håkan
Edvinsson, Tomas
Source :
Journal of Materials Chemistry A; 2/21/2016, Vol. 4 Issue 7, p2630-2642, 13p
Publication Year :
2016

Abstract

The formation of CH<subscript>3</subscript>NH<subscript>3</subscript>PbI<subscript>3</subscript> (MAPbI<subscript>3</subscript>) from its precursors is probably the most significant step in the control of the quality of this semiconductor perovskite material, which is highly promising for photovoltaic applications. Here we investigated the transformation of spin coated PbI<subscript>2</subscript> films to MAPbI<subscript>3</subscript> using a reaction with MAI in vapor phase, referred to as vapor assisted solution process (VASP). The presence of a mesoporous TiO<subscript>2</subscript> scaffold on the substrate was found to speed up reaction and led to complete conversion of PbI<subscript>2</subscript>, while reaction on glass substrates was slower, with some PbI<subscript>2</subscript> remaining even after prolonged reaction time. Based on data from UV-visible spectroscopy, Raman spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy, the formation of an X-ray amorphous intermediate phase is proposed, which is identified by an increasing absorption from 650 to 500 nm in the absorption spectrum. This feature disappears upon long reaction times for films on planar substrates, but persists for films on mesoporous TiO<subscript>2</subscript>. Poor solar cell performance of planar VASP prepared devices was ascribed to PbI<subscript>2</subscript> remaining in the film, forming a barrier between the perovskite layer and the compact TiO<subscript>2</subscript>/FTO contact. Good performance, with efficiencies up to 13.3%, was obtained for VASP prepared devices on mesoporous TiO<subscript>2</subscript>. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
20507488
Volume :
4
Issue :
7
Database :
Complementary Index
Journal :
Journal of Materials Chemistry A
Publication Type :
Academic Journal
Accession number :
112863577
Full Text :
https://doi.org/10.1039/c5ta08745g