Back to Search Start Over

Study of the high throughput flexographic process for silicon solar cell metallisation.

Authors :
Thibert, Sébastien
Jourdan, Johann
Bechevet, Bernard
Mialon, Simon
Chaussy, Didier
Reverdy‐Bruas, Nadège
Beneventi, Davide
Source :
Progress in Photovoltaics; Feb2016, Vol. 24 Issue 2, p240-252, 13p
Publication Year :
2016

Abstract

A commercially available silver paste was modified to match the flexographic process requirements. Rotational and oscillatory rheological tests were carried out to assess the printability and spreading behaviour of the resulting inks. Then, a multifactorial approach was used on a laboratory-scale printing press to adapt the flexographic process for the front side metallisation of Cz-Si solar cells, especially for the seed layer deposit of two layer contacts. To quickly identify the significant process parameters, a fractional design of experiment based on a screening approach at two levels was performed. Afterwards, two full factorial designs of experiments were implemented. While the first one allows a better understanding of the effect of the main factors and interactions, the second allows a fine tuning and a confirmation of the first results. Additionally, this methodology allows corroborating the influence of the ink rheological properties on the printing results. Following the process study and optimisation, a seed layer with an average width of 25 µm was printed at a high 0.3 m/s throughput. Additional results suggest that the line width and the throughput can be further improved, which underlines the potential of flexography for photovoltaic applications. Finally, the light-induced process was used to thicken the seed layer after a standard firing-through step, leading to an encouraging 17.9% efficiency on Cz-Si solar cells. Copyright © 2015 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10627995
Volume :
24
Issue :
2
Database :
Complementary Index
Journal :
Progress in Photovoltaics
Publication Type :
Academic Journal
Accession number :
112358747
Full Text :
https://doi.org/10.1002/pip.2659