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Modeling and characterization of piezoelectric beams based on an aluminum nitride thin-film layer.

Modeling and characterization of piezoelectric beams based on an aluminum nitride thin-film layer.

Authors :
Herth, Etienne
Algré, Emmanuelle
Rauch, Jean‐Yves
Gerbedoen, Jean‐Claude
Defrance, Nicolas
Delobelle, Patrick
Source :
Physica Status Solidi. A: Applications & Materials Science; Jan2016, Vol. 213 Issue 1, p114-121, 8p
Publication Year :
2016

Abstract

This paper presents a method to determine the mechanical properties of piezoelectric thin films. The vibrational behavior of microcantilevers and clamped-clamped beams actuated by aluminum nitride (AlN) piezoelectric films were analyzed in order to investigate the suitability of these devices as characterization tools. Different geometries of resonators composed of a free-standing structure made up of a TiPt/AlN/TiPt piezoelectric stack were tested. The out-of-plane motion of the resonators was assessed by laser Doppler vibrometry. An AlN Young's modulus of about 200 GPa was extracted from resonance-frequency measurements by means of Comsol software simulations that allow taking into account AlN underetching. This value of Young's modulus was compared to the one measured by a nanoindentation technique. The quality of crystallinity was also assessed using X-ray diffraction (XRD) measurements. We then estimated the residual stress (about 200 MPa) using an interferometry measurement. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
18626300
Volume :
213
Issue :
1
Database :
Complementary Index
Journal :
Physica Status Solidi. A: Applications & Materials Science
Publication Type :
Academic Journal
Accession number :
112212936
Full Text :
https://doi.org/10.1002/pssa.201532302