Utility of dual frequency hybrid source for plasma and radical generation in plasma enhanced chemical vapor deposition process.

Looking into the aspect of material processing, this work evaluates alternative plasma concepts in SiH₄/H₂ plasmas to investigate the radical and plasma generation in the plasma enhanced chemical vapor deposition (PECVD) synthesis of nanocrystalline Si (nc-Si:H). Simultaneous measurements by vacuum ultraviolet absorption spectroscopy (VUVAS), optical emission spectroscopy (OES), and radio frequency (RF) compensated Langmuir probe (LP) reveal that RF/ultrahigh frequency (UHF) hybrid source can efficiently produce H radicals and plasmas that are accountable for nc-Si:H film synthesis. The efficacy of hybrid plasmas is also discussed. [ABSTRACT FROM AUTHOR]