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Thermal Desorption of Helium from Defected Silicon.
- Source :
- Acta Physica Polonica: A; 2015, Vol. 128 Issue 5, p849-852, 4p
- Publication Year :
- 2015
-
Abstract
- The thermal desorption spectroscopy measurements of He implanted silicon samples are reported. The He implantation energy was 90 keV (at 45° tilt) while the fluence was 10<superscript>16</superscript> cm<superscript>-2</superscript>. Additionally, the influence of Si pre-implantation (fluences in the range 10<superscript>14</superscript>-10<superscript>16</superscript> cm, E = 260 keV) was under investigation. The He releases from both interstitials/vacancies (β peak) and cavities (α peak or rather band consisting probably of at least two peaks) were observed. The α peak disappears for the pre-implantation fluences larger than 10<superscript>15</superscript> cm<superscript>-2</superscript>, while β peak becomes broader and shifts toward higher temperatures. The thermal desorption spectra were collected using heating ramp rates in the range 0.3-0.7 K/s. Desorption activation energy of the β peak for different pre-implantation fluences was found using the Redhead analysis of the β peak shift. It varies from 0.97 eV for the sample that was not pre-implanted up to 1.3 eV for the sample pre-implanted with the fluence 10<superscript>16</superscript> cm<superscript>-2</superscript>. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 05874246
- Volume :
- 128
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Acta Physica Polonica: A
- Publication Type :
- Academic Journal
- Accession number :
- 111887340
- Full Text :
- https://doi.org/10.12693/APhysPolA.128.849