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Low temperature fabrication of metal oxide thin film transistors formed by a heated aqueous precursor solution.

Authors :
Keun Ho Lee
Sun Woong Han
Jee Ho Park
Young Bum Yoo
Se Jong Lee
Hong Koo Baik
Kie Moon Song
Source :
Japanese Journal of Applied Physics; Jan2016, Vol. 55 Issue 1, p1-1, 1p
Publication Year :
2016

Abstract

We introduce an easy process for the fabrication of solution-processed indium oxide (InO) thin film transistors (TFTs) by heating a precursor solution. InO TFTs fabricated from solutions of an InO precursor heated at 90 °C had the highest mobility of 4.61 cm<superscript>2</superscript> V<superscript>−1</superscript> s<superscript>−1</superscript> after being annealed at 200 °C. When the InO precursor solution is heated, HNO<subscript>3</subscript> may be thermally evaporated in the InO precursor solution. Nitrogen atoms can disrupt hydrolysis and condensation reactions. An InO thin film deposited from a solution of the heated InO precursor is advantageous for hydrolysis and condensation reactions due to the absence of nitrogen atoms. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00214922
Volume :
55
Issue :
1
Database :
Complementary Index
Journal :
Japanese Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
111885082
Full Text :
https://doi.org/10.7567/JJAP.55.010304