Back to Search Start Over

Investigation on material selection for gate dielectric in nanocrystalline silicon (nc-Si) top-gated thin film transistor (TFT) using Ashby's, VIKOR and TOPSIS.

Investigation on material selection for gate dielectric in nanocrystalline silicon (nc-Si) top-gated thin film transistor (TFT) using Ashby's, VIKOR and TOPSIS.

Authors :
Sharma, Prachi
Gupta, Navneet
Source :
Journal of Materials Science: Materials in Electronics; Dec2015, Vol. 26 Issue 12, p9607-9613, 7p
Publication Year :
2015

Abstract

In this paper, various possible materials for the gate dielectric of nc-Si top-gated thin film transistor (TFT) and their material properties like dielectric constant, bandgap, conduction band offset and interface trap density are taken into consideration and Ashby's, VlseKriterijumska Optimizacija I Kompromisno Resenje in Serbian (VIKOR) and Technique for order preference by similarity to ideal solution (TOPSIS) approaches are applied to select the most suitable gate dielectric material. The analysis results suggest that SiN is the most suitable gate dielectric material for the better performance of nc-Si top-gated TFT. The results shows good agreement between Ashby's, VIKOR and TOPSIS approaches. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
26
Issue :
12
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
111160798
Full Text :
https://doi.org/10.1007/s10854-015-3624-9