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Mode space tight binding model for ultra-fast simulations of III-V nanowire MOSFETs and heterojunction TFETs.

Authors :
Afzalian, A.
Huang, J.
Ilatikhameneh, H.
Charles, J.
Lemus, D.
Lopez, J. Bermeo
Rubiano, S. Perez
Kubis, T.
Povolotskyi, M.
Klimeck, G.
Passlack, M.
Yeo, Y.-C.
Source :
2015 Fourth International Conference on Future Generation Communication Technology (FGCT); 2015, p1-3, 3p
Publication Year :
2015

Details

Language :
English
ISBNs :
9781479982677
Database :
Complementary Index
Journal :
2015 Fourth International Conference on Future Generation Communication Technology (FGCT)
Publication Type :
Conference
Accession number :
111127817
Full Text :
https://doi.org/10.1109/IWCE.2015.7301934