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Comprehensive Methodology for the Statistic of SRAM Vmin.

Authors :
Pompl, Thomas
Strasser, Rudolf
Drexl, Stefan
Ostermayr, Martin
Source :
IEEE Transactions on Device & Materials Reliability; Sep2015, Vol. 15 Issue 3, p289-297, 9p
Publication Year :
2015

Abstract

In this paper, a comprehensive methodology for the statistic of SRAM Vmin is presented. A plotting method for the linearization of the statistical distributions is proposed, and methodologies for size scaling and statistical extrapolations are developed. Many analogies to the established statistical framework for time-dependent dielectric breakdown are found. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISSN :
15304388
Volume :
15
Issue :
3
Database :
Complementary Index
Journal :
IEEE Transactions on Device & Materials Reliability
Publication Type :
Academic Journal
Accession number :
110834233
Full Text :
https://doi.org/10.1109/TDMR.2015.2429792