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Effects of Pre-annealing on Firing Stability of Atomic Layer-Deposited Al2O3.
- Source :
- Israel Journal of Chemistry; Oct2015, Vol. 55 Issue 10, p1075-1080, 6p
- Publication Year :
- 2015
-
Abstract
- Al<subscript>2</subscript>O<subscript>3</subscript> layers fabricated with atomic layer deposition (ALD) show high levels of surface passivation on p- and n-type silicon wafers. In order to form front and rear electrodes, Al<subscript>2</subscript>O<subscript>3</subscript> layers should undergo a firing process at a high peak temperature. Therefore, the Al<subscript>2</subscript>O<subscript>3</subscript> layer must be stable under these conditions to maintain a high level of surface passivation during the firing process. In this study, Al<subscript>2</subscript>O<subscript>3</subscript> layers fabricated with ALD were pre-annealed to enhance their thermal stability during the firing process. From quasi-steady state photoconductance (QSSPC) measurements, the difference between the implied V<subscript>oc</subscript> values of the pre-annealed and fired samples was found to be smallest (3 mV) when the sample was pre-annealed at 620 °C. The surface recombination rate calculated from capacitance-voltage ( C- V) measurements of metal-Al<subscript>2</subscript>O<subscript>3</subscript>-Si (metal-insulator-semiconductor) structures was shown to be low when the sample was pre-annealed at 600-650 °C. Thus, firing stability was achieved with pre-annealing at 620 °C by reducing the surface recombination rate. We conclude that it is necessary to pre-anneal the Al<subscript>2</subscript>O<subscript>3</subscript> passivation layer at this specific temperature to reduce the degradation of the passivation quality of Al<subscript>2</subscript>O<subscript>3</subscript> after the firing process. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00212148
- Volume :
- 55
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Israel Journal of Chemistry
- Publication Type :
- Academic Journal
- Accession number :
- 110404902
- Full Text :
- https://doi.org/10.1002/ijch.201400192