Wide gamut white light emitting diodes using quantum dot-silicone film protected by an atomic layer deposited TiO2 barrier.

MLA

Chen, Guan-Hong, et al. “Wide Gamut White Light Emitting Diodes Using Quantum Dot-Silicone Film Protected by an Atomic Layer Deposited TiO2 Barrier.” Chemical Communications, vol. 51, no. 79, Oct. 2015, pp. 14750–53. EBSCOhost, https://doi.org/10.1039/c5cc05299h.

APA

Chen, G.-H., Yeh, C.-W., Yeh, M.-H., Ho, S.-J., & Chen, H.-S. (2015). Wide gamut white light emitting diodes using quantum dot-silicone film protected by an atomic layer deposited TiO2 barrier. Chemical Communications, 51(79), 14750–14753. https://doi.org/10.1039/c5cc05299h

Chicago

Chen, Guan-Hong, Chang-Wei Yeh, Ming-Hua Yeh, Shih-Jung Ho, and Hsueh-Shih Chen. 2015. “Wide Gamut White Light Emitting Diodes Using Quantum Dot-Silicone Film Protected by an Atomic Layer Deposited TiO2 Barrier.” Chemical Communications 51 (79): 14750–53. doi:10.1039/c5cc05299h.