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Wide gamut white light emitting diodes using quantum dot-silicone film protected by an atomic layer deposited TiO2 barrier.

Authors :
Chen, Guan-Hong
Yeh, Chang-Wei
Yeh, Ming-Hua
Ho, Shih-Jung
Chen, Hsueh-Shih
Source :
Chemical Communications; 10/11/2015, Vol. 51 Issue 79, p14750-14753, 4p
Publication Year :
2015

Abstract

Wide gamut light emitting diodes using quantum dot-silicone film protected by atomic layer deposited TiO<subscript>2</subscript> film were demonstrated. The core/shell QDs with multi-emission peaks were synthesised by a one-pot approach, in which the emission wavelength and colour composition were in situ adjusted during the synthetic process. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
13597345
Volume :
51
Issue :
79
Database :
Complementary Index
Journal :
Chemical Communications
Publication Type :
Academic Journal
Accession number :
110098593
Full Text :
https://doi.org/10.1039/c5cc05299h