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Influence of nitrogen-related defects on optical and electrical behaviour in HfO2-xNx deposited by high-power impulse magnetron sputtering.
- Source :
- Applied Physics Letters; 9/14/2015, Vol. 107 Issue 11, p1-4, 4p, 1 Chart, 4 Graphs
- Publication Year :
- 2015
-
Abstract
- HfO<subscript>2-x</subscript>N<subscript>x</subscript> films have been deposited by high-power impulse magnetron sputtering in an Ar-O<subscript>2</subscript>-N<subscript>2</subscript> atmosphere with a series of nitrogen partial pressures. X-ray absorption spectroscopy revealed the optimum deposition conditions required to passivate O vacancies in the HfO<subscript>2-x</subscript>N<subscript>x</subscript> films by nitrogen. Low-mobility interstitial species prevent crystallisation of nitrogen-incorporated films. These effects combine to remove leakage paths resulting in superior breakdown strengths compared to films deposited without nitrogen. The bandgap was maintained at ~5.9 eV in the films in which nitrogen passivated the oxygen vacancies. This is essential to provide sufficient band offsets for HfO<subscript>2-x</subscript>N<subscript>x</subscript> films to be used an effective gate dielectric. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 107
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 109560026
- Full Text :
- https://doi.org/10.1063/1.4931099