Influence of cooling rate in planar thermally assisted magnetic random access memory: Improved writeability due to spin-transfer-torque influence.

MLA

Chavent, A., et al. “Influence of Cooling Rate in Planar Thermally Assisted Magnetic Random Access Memory: Improved Writeability Due to Spin-Transfer-Torque Influence.” Applied Physics Letters, vol. 107, no. 11, Sept. 2015, pp. 1–5. EBSCOhost, https://doi.org/10.1063/1.4930933.

APA

Chavent, A., Ducruet, C., Portemont, C., Creuzet, C., Vila, L., Alvarez-Hérault, J., Sousa, R. C., Prejbeanu, I. L., & Dieny, B. (2015). Influence of cooling rate in planar thermally assisted magnetic random access memory: Improved writeability due to spin-transfer-torque influence. Applied Physics Letters, 107(11), 1–5. https://doi.org/10.1063/1.4930933

Chicago

Chavent, A., C. Ducruet, C. Portemont, C. Creuzet, L. Vila, J. Alvarez-Hérault, R. C. Sousa, I. L. Prejbeanu, and B. Dieny. 2015. “Influence of Cooling Rate in Planar Thermally Assisted Magnetic Random Access Memory: Improved Writeability Due to Spin-Transfer-Torque Influence.” Applied Physics Letters 107 (11): 1–5. doi:10.1063/1.4930933.