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Paper No S12.5: Self-Aligned a-IGZO TFTs: Impact of S/D Contacts Formation on Their Negative-Bias-Illumination-Stress (NBIS) Instability.
- Source :
- SID Symposium Digest of Technical Papers; Sep2015 Supplement, Vol. 46, p55-55, 2p
- Publication Year :
- 2015
-
Abstract
- In this work, we present the impact of S/D contact formation, that is, by SiN plasma doping (hydrogen incorporation), metallic reduction (by calcium) and by argon plasma (compositional change) on NBIS instabilities of self-aligned a-IGZO TFTs. [ABSTRACT FROM AUTHOR]
- Subjects :
- ELECTRIC properties of silicon nitride
LIGHTING
THIN film transistors
Subjects
Details
- Language :
- English
- ISSN :
- 0097966X
- Volume :
- 46
- Database :
- Complementary Index
- Journal :
- SID Symposium Digest of Technical Papers
- Publication Type :
- Academic Journal
- Accession number :
- 109555972
- Full Text :
- https://doi.org/10.1002/sdtp.10532