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Two-band model interpretation of the p- to n-transition in ternary tetradymite topological insulators.

Authors :
Chasapis, T. C.
Leung, B.
Dravid, V. P.
Calta, N. P.
Kanatzidis, M. G.
Koumoulis, D.
Bouchard, L.-S.
Lo, S.-H.
Source :
APL Materials; 2015, Vol. 3 Issue 8, p1-8, 8p
Publication Year :
2015

Abstract

The requirement for large bulk resistivity in topological insulators has led to the design of complex ternary and quaternary phases with balanced donor and acceptor levels. A common feature of the optimized phases is that they lie close to the p- to n-transition. The tetradymite Bi<subscript>2</subscript>Te<subscript>3-x</subscript>Se<subscript>x</subscript> system exhibits minimum bulk conductance at the ordered composition Bi<subscript>2</subscript>Te<subscript>2</subscript>Se. By combining local and integral measurements of the density of states, we find that the point of minimum electrical conductivity at x = 1.0 where carriers change from hole-like to electron-like is characterized by conductivity of the mixed type. Our experimental findings, which are interpreted within the framework of a two-band model for the different carrier types, indicate that the mixed state originates from different types of native defects that strongly compensate at the crossover point. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
2166532X
Volume :
3
Issue :
8
Database :
Complementary Index
Journal :
APL Materials
Publication Type :
Academic Journal
Accession number :
109221738
Full Text :
https://doi.org/10.1063/1.4922857