Compliance current induced non-reversible transition from unipolar to bipolar resistive switching in a Cu/TaOx/Pt structure.

Authors :: Kurnia, F.
Jung, C. U.
Lee, B. W.
Chunli Liu
Source :: Applied Physics Letters; 8/17/2015, Vol. 107 Issue 7, p073501-1-073501-4, 4p, 1 Diagram, 3 Graphs
Publication Year :: 2015
Abstract: Unipolar resistive switching (URS) as well as bipolar resistive switching (BRS) behaviors in a Cu/TaOx/Pt structure were investigated. Upon increasing the compliance current (I<subscript>c</subscript>), the currentvoltage characteristics of the Cu/TaO<subscript>x</subscript>/Pt structure showed a URS behavior at I<subscript>c</subscript>=0.1mA then experienced a non-reversible transition from the URS to a BRS mode at I<subscript>c</subscript>=10 mA. Through a detailed analysis of the electrical properties in each resistance state of URS and BRS, we revealed that the permanent transition from the URS to the BRS mode was induced by the formation of stronger Cu metal conductive filaments within the TaO<subscript>x</subscript> thin film. More interestingly, both URS and BRS modes were governed by the formation and rupture of conductive filaments, whereas the rupture of these filamentary paths in BRS was proposed due to both Joule heating and electric field effects. [ABSTRACT FROM AUTHOR]

Subjects :: FIELD-effect transistors
RESISTIVE force
SWITCHING theory
COPPER metallurgy
THIN film transistors
CRYSTAL whiskers
ELECTRIC field effects

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