Solar Blind Ultraviolet Photodetectors With High Dynamic Resistance Using Zn3Ta2O5 Layer.

The vapor cooling condensation system was utilized to deposit the homostructured n-ZnO:In/i-ZnO/p-ZnO:LiNO3 and heterostructured n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3 on sapphire substrates. The zero bias dynamic resistance of the latter ones was improved to 2.43\times 10^12 ~\Omega compared with 7.94\times 10^11 ~\Omega of the former ones. Using the photoelectrochemical (PEC) oxidation method to treat the heterostructured n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3 ultraviolet photodetectors, the zero bias dynamic resistance was further improved to 6.02\times 10^12~\Omega . The sensing and the noise performances of the ultraviolet photodetectors were effectively improved by the Zn3Ta2O5 absorption layer and the PEC oxidation method. [ABSTRACT FROM PUBLISHER]