Enhancement mode p-channel SnO thin-film transistors with dual-gate structures.

The authors demonstrate the enhancement mode p-type SnO thin-film transistors (TFTs) using dual gate (DG) structures. The cross-linked polyvinyl alcohol dielectric with a polymethylmethacrylate buffer layer is formed as a top gate (TG) insulator of the DG SnO TFT. The fabricated DG SnO TFT exhibits better electrical performances than the bottom gate (BG) and TG SnO TFTs including higher field-effect mobility and smaller subthreshold slope. In fabricated DG TFTs, the threshold voltage (V_th) of the BG TFT is linearly modulated by the voltage applied to the TG electrode. The BG transfer curve exhibits a depletion mode operation when measured while TG is grounded, but operates in the enhancement mode with a negative V_th (=-0.9 V) when a positive bias of 10V is applied to the TG electrode. The enhancement mode operation of p-type SnO TFTs can increase the output voltage swing range and decreases the off-stage leakage currents of the complementary logic circuits. [ABSTRACT FROM AUTHOR]