30 μm-pitch oxide TFT-based gate driver design for small-size, high-resolution, and narrow-bezel displays.

We report the design and fabrication of a high-yield, a high-speed, and an ultranarrow gate driver with amorphous-indium - gallium - zinc-oxide thin-film transistors (TFTs). A single stage of the gate driver consists of nine TFTs and one capacitor. For supply voltage (VDD) of 20 V, the gate driver operates with a pulsewidth of 2 μs, which is compatible with a 4k2k display operated at 240 Hz. In addition, the proposed gate driver is ultrasmall in physical size, which is only 30 μm in width (pitch) and 720 μm in length, and thus suitable for small-size, high-resolution, and narrow bezel display. [ABSTRACT FROM AUTHOR]