On the interplay between relaxation, defect formation, and atomic Sn distribution in Ge(1-x)Sn(x) unraveled with atom probe tomography.

MLA

Kumar, A., et al. “On the Interplay between Relaxation, Defect Formation, and Atomic Sn Distribution in Ge(1-x)Sn(x) Unraveled with Atom Probe Tomography.” Journal of Applied Physics, vol. 118, no. 2, July 2015, pp. 025302-1-025302-8. EBSCOhost, https://doi.org/10.1063/1.4926473.

APA

Kumar, A., Demeulemeester, J., Bogdanowicz, J., Bran, J., Melkonyan, D., Fleischmann, C., Gencarelli, F., Shimura, Y., Wang, W., Loo, R., & Vandervorst, W. (2015). On the interplay between relaxation, defect formation, and atomic Sn distribution in Ge(1-x)Sn(x) unraveled with atom probe tomography. Journal of Applied Physics, 118(2), 025302-1-025302-8. https://doi.org/10.1063/1.4926473

Chicago

Kumar, A., J. Demeulemeester, J. Bogdanowicz, J. Bran, D. Melkonyan, C. Fleischmann, F. Gencarelli, et al. 2015. “On the Interplay between Relaxation, Defect Formation, and Atomic Sn Distribution in Ge(1-x)Sn(x) Unraveled with Atom Probe Tomography.” Journal of Applied Physics 118 (2): 025302-1-025302-8. doi:10.1063/1.4926473.