Cite
Relaxed, low threading defect density Si0.7Ge0.3 epitaxial layers grown on Si by rapid thermal chemical vapor deposition.
MLA
Watson, G.Patrick, et al. “Relaxed, Low Threading Defect Density Si0.7Ge0.3 Epitaxial Layers Grown on Si by Rapid Thermal Chemical Vapor Deposition.” Journal of Applied Physics, vol. 75, no. 1, Jan. 1994, p. 263. EBSCOhost, https://doi.org/10.1063/1.355894.
APA
Watson, G. P., Fitzgerald, E. A., Ya-Hong Xie, & Monroe, D. (1994). Relaxed, low threading defect density Si0.7Ge0.3 epitaxial layers grown on Si by rapid thermal chemical vapor deposition. Journal of Applied Physics, 75(1), 263. https://doi.org/10.1063/1.355894
Chicago
Watson, G. Patrick, Eugene A. Fitzgerald, Ya-Hong Xie, and Don Monroe. 1994. “Relaxed, Low Threading Defect Density Si0.7Ge0.3 Epitaxial Layers Grown on Si by Rapid Thermal Chemical Vapor Deposition.” Journal of Applied Physics 75 (1): 263. doi:10.1063/1.355894.