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Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme.
- Source :
- Applied Physics Letters; 9/15/2003, Vol. 83 Issue 11, p2121, 3p, 1 Diagram, 2 Graphs
- Publication Year :
- 2003
-
Abstract
- A GaN-based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated in an extended cavity structure. A VCSEL device had a long extended cavity, which consisted of a sapphire substrate as well as a GaN epilayer and had an integrated microlens on one side. High-reflection dielectric mirrors were deposited on both sides of the laser cavity. The laser was optically pumped and operated at room temperature. The VCSEL device lased at a low threshold excitation intensity of 160 kW/cm[sup 2]. In contrast to a conventional microcavity-VCSEL structure, the VCSEL operated in multiple longitudinal modes with mode spacing consistent with its physical thickness. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- GALLIUM nitride
LASER surgery
HOLES
LIGHT emitting diodes
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 83
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 10774648
- Full Text :
- https://doi.org/10.1063/1.1611643