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Coupled dopant diffusion and segregation in inhomogeneous SiGe alloys: Experiments and modeling.
- Source :
- Journal of Applied Physics; 6/7/2015, Vol. 117 Issue 21, p214901-1-214901-7, 7p, 1 Diagram, 4 Graphs
- Publication Year :
- 2015
-
Abstract
- A coupled diffusion and segregation model was derived, where the contributions from diffusion and segregation to dopant flux are explicitly shown. The model is generic to coupled diffusion and segregation in inhomogeneous alloys, and provides a new approach in segregation coefficient extraction, which is especially helpful for heterostructures with lattice mismatch strains. Experiments of coupled P diffusion and segregation were performed with graded SiGe layers for Ge molar fractions up to 0.18, which are relevant to pnp SiGe heterojunction bipolar transistors. The model was shown to describe both diffusion and segregation behavior well. The diffusion-segregation model for P in SiGe alloys was calibrated and E<subscript>seg</subscript> = 0:5 eV is suggested for the temperature range from 800 °C to 950 °C. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 117
- Issue :
- 21
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 103090892
- Full Text :
- https://doi.org/10.1063/1.4921798