Effects of atomic scale imperfection at the interfaces of CoSi2 and Si (100) on Schottky barrier contacts.

We report here the correlation of electrical properties on Schottky barrier contacts and atomic scale imperfections based on the degree of lattice distortion and moiré fringes at the interfaces of CoSi₂ and Si. The I-V measurements showed that the higher levels of perfection of the interfaces gave better Schottky barrier characteristics and we discuss the implications of the transport property at Schottky barrier contacts. [ABSTRACT FROM AUTHOR]