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AlGaN/GaN Metal–Oxide–Semiconductor Heterojunction Field-Effect Transistor Integrated With Clamp Circuit to Enable Normally-Off Operation.
- Source :
- IEEE Electron Device Letters; Jun2015, Vol. 36 Issue 6, p540-542, 3p
- Publication Year :
- 2015
-
Abstract
- We have developed an AlGaN/GaN-on-Si metal–oxide–semiconductor heterojunction field-effect transistor (MOSHFET) integrated with a clamp circuit to enable normally-off operation. A clamp circuit consisting of a multilayer MIM capacitor and a Schottky barrier diode was monolithically integrated with a normally ON AlGaN/GaN MOSHFET. The integrated clamp circuit shifted the input driving signal from (0, 20 V) to (−19.2, 0.8 V), allowing the normally ON AlGaN/GaN MOSHFET with a pinchoff voltage of −14 V to be operated as a normally-off device. The multichannel device with a 5-mm channel width exhibited a drain current density of $\sim 470$ mA/mm and a breakdown voltage of >900 V. In comparison with other conventional normally-off GaN-based FETs, a higher threshold voltage with high current density (i.e., low ON-resistance) can be achieved with easy device processing, no need for gate recess or complicated epitaxial growth. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 36
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 102874221
- Full Text :
- https://doi.org/10.1109/LED.2015.2427202