Back to Search Start Over

AlGaN/GaN Metal–Oxide–Semiconductor Heterojunction Field-Effect Transistor Integrated With Clamp Circuit to Enable Normally-Off Operation.

Authors :
Han, Sang-Woo
Park, Sung-Hoon
Lee, Jae-Gil
Lim, Jongtae
Cha, Ho-Young
Source :
IEEE Electron Device Letters; Jun2015, Vol. 36 Issue 6, p540-542, 3p
Publication Year :
2015

Abstract

We have developed an AlGaN/GaN-on-Si metal–oxide–semiconductor heterojunction field-effect transistor (MOSHFET) integrated with a clamp circuit to enable normally-off operation. A clamp circuit consisting of a multilayer MIM capacitor and a Schottky barrier diode was monolithically integrated with a normally ON AlGaN/GaN MOSHFET. The integrated clamp circuit shifted the input driving signal from (0, 20 V) to (−19.2, 0.8 V), allowing the normally ON AlGaN/GaN MOSHFET with a pinchoff voltage of −14 V to be operated as a normally-off device. The multichannel device with a 5-mm channel width exhibited a drain current density of $\sim 470$ mA/mm and a breakdown voltage of >900 V. In comparison with other conventional normally-off GaN-based FETs, a higher threshold voltage with high current density (i.e., low ON-resistance) can be achieved with easy device processing, no need for gate recess or complicated epitaxial growth. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
07413106
Volume :
36
Issue :
6
Database :
Complementary Index
Journal :
IEEE Electron Device Letters
Publication Type :
Academic Journal
Accession number :
102874221
Full Text :
https://doi.org/10.1109/LED.2015.2427202