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Domain fracture and recovery process of metal phthalocyanine monolayers via NO2 and H2O.

Authors :
Jun Hong Park
Sangyeob Lee
Kummel, Andrew C.
Source :
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; May/Jun2015, Vol. 33 Issue 3, p030604-1-030604-6, 6p
Publication Year :
2015

Abstract

CuPc ultrathin films (5 monolayers) are employed to detect NO<subscript>2</subscript> in chemFETs [organic thin film transistors (OTFTs)]; while the NO<subscript>2</subscript> causes OTFT degradation, H<subscript>2</subscript>O restores OTFT performance. To develop an atomic understanding of this H<subscript>2</subscript>O induced performance recovery, NO<subscript>2</subscript>/CuPc/ Au(111) was exposed to H<subscript>2</subscript>O, then observed using ultrahigh vacuum scanning tunneling microscopy. After dosing NO<subscript>2</subscript> (10 ppm for 5min) onto CuPc monolayers under ambient conditions, domain fracture is induced in CuPc monolayers, and CuPc aggregates are formed near new grain boundaries, consistent with dissociative O adsorption between CuPc molecules and Au(111). Conversely, after exposing H<subscript>2</subscript>O onto a fractured CuPc monolayer for 30 min, fractured domains merge, then large area domains are generated. As the duration of H<subscript>2</subscript>O exposure increases to 4 h, second layer growth of CuPc molecules is observed on the CuPc monolayers consistent with H<subscript>2</subscript>O breakdown of CuPc aggregates which have formed at the domain boundaries. The results are consistent with H<subscript>2</subscript>O driving the removal of atomic O between CuPc molecules and Au(111) consistent with previous sensing results. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
21662746
Volume :
33
Issue :
3
Database :
Complementary Index
Journal :
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics
Publication Type :
Academic Journal
Accession number :
102848226
Full Text :
https://doi.org/10.1116/1.4919227