Strain controlled orbital state and magnetization in insulating LaMnO3+δ films.

Authors :: Zhang, A. M.
Cheng, S. L.
Lin, J. G.
Wu, X. S.
Source :: Journal of Applied Physics; 2015, Vol. 117 Issue 17, p17B325-1-17B325-4, 4p, 6 Graphs
Publication Year :: 2015
Abstract: LaMnO<subscript>3+δ</subscript> films with various thicknesses were grown on LaAlO<subscript>3</subscript> (001) single crystal substrate to investigate the effect of in-plane compressive strain (~-0.57%) on magnetic properties. All films exhibit a blocking temperature T<subscript>b</subscript> at which the zero field cooled magnetization reaches a maximum, indicating the ferromagnetic (FM) nanoclusters are embedded in the background of antiferromagnetic (AFM) matrix. The onset temperature of FM transition T<subscript>c</subscript> and T<subscript>b</subscript> is increased by 24% and 89%, respectively, with the thickness decreasing from 82.4 nm to 9.2 nm. Simultaneously, the saturation magnetization greatly increases by 309%, which is ascribed to the strain-induced transition of AFM to FM phase due to the orbital order structure switching from x²- 1/y²-1 [A-type] to (x²- y²) + (z²- 1) [F-type]. [ABSTRACT FROM AUTHOR]