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Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface.

Authors :
Yi Li
Bin Liu
Rong Zhang
Zili Xie
Zhe Zhuang
JiangPing Dai
Tao Tao
Ting Zhi
Guogang Zhang
Peng Chen
Fangfang Ren
Hong Zhao
Youdou Zheng
Source :
Journal of Applied Physics; 2015, Vol. 117 Issue 15, p153103-1-153103-5, 5p, 1 Diagram, 4 Graphs
Publication Year :
2015

Abstract

Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620 nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO<subscript>2</subscript> structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%-53% as compared to that for the SiO<subscript>2</subscript> coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO<subscript>2</subscript> structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
117
Issue :
15
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
102243192
Full Text :
https://doi.org/10.1063/1.4918555