The Fabrication and Characteristics of CuPc thin Film Phototransistor.

Inorganic photosensitive device is hard to make big area photoelectric sensor and it is disadvantageous in cost and complexity of technology. The structure of organic photosensitive device is diode or plane field effect dynatron. But these devices have small photocurrent gain and larger driving voltage. Aiming at these problems, we proposed a new device structure in this paper. Adopting the method of vacuum evaporation and sputtering, we fabricated a vertical structure of photoelectric transistor: ITO/CuPc/Al/CuPe/Cu. We tested and analyzed the the devices photoelectric characteristics, and the results show that the the I-V characteristics of transistor are unsaturated and photosensitive. When V_ec = 3 V, the amplification factor without light is 16.5 and the amplification factor under 625 nm light is 266. 2. [ABSTRACT FROM AUTHOR]