Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric.

MLA

Li, Ya, et al. “Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric.” IEEE Transactions on Electron Devices, vol. 62, no. 4, Apr. 2015, pp. 1184–88. EBSCOhost, https://doi.org/10.1109/TED.2015.2402220.

APA

Li, Y., Pei, Y., Hu, R., Chen, Z., Ni, Y., Lin, J., Chen, Y., Zhang, X., Shen, Z., Liang, J., Fan, B., Wang, G., & Duan, H. (2015). Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric. IEEE Transactions on Electron Devices, 62(4), 1184–1188. https://doi.org/10.1109/TED.2015.2402220

Chicago

Li, Ya, Yanli Pei, Ruiqin Hu, Zimin Chen, Yiqiang Ni, Jiayong Lin, Yiting Chen, et al. 2015. “Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric.” IEEE Transactions on Electron Devices 62 (4): 1184–88. doi:10.1109/TED.2015.2402220.