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The dramatic effect of the annealing temperature and dielectric functionalization on the electron mobility of indene-C60 bis-adduct thin films.

Authors :
Orgiu, Emanuele
Squillaci, Marco A.
Rekab, Wassima
Börjesson, Karl
Liscio, Fabiola
Zhang, Lei
Samorì, Paolo
Source :
Chemical Communications; 2015, Vol. 51 Issue 25, p5414-5417, 4p
Publication Year :
2015

Abstract

Herein we report on the charge transport properties of spin-coated thin films of an n-type fullerene derivative, i.e. the indene-C<subscript>60</subscript> bis-adduct (ICBA). In particular, the effects of annealing temperature and duration as well as surface functionalization are explored. Electron mobilities approaching 0.1 cm<superscript>2</superscript> V<superscript>−1</superscript> s<superscript>−1</superscript> are reported. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
13597345
Volume :
51
Issue :
25
Database :
Complementary Index
Journal :
Chemical Communications
Publication Type :
Academic Journal
Accession number :
101577562
Full Text :
https://doi.org/10.1039/c5cc00151j