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Evaluation of SiC BJTs for High-Power DC–DC Converters.
- Source :
- IEEE Transactions on Power Electronics; May2014, Vol. 29 Issue 5, p2474-2481, 8p
- Publication Year :
- 2014
-
Abstract
- The design of a 200-A, all-SiC power-module-based on bipolar junction transistor devices is described, and the impact of the module is assessed on the performance of a 50-kW dc-dc converter for electric vehicle applications, particularly the overall weight and efficiency. Using a hard-switching dual-interleaved topology, which has proven high efficiency and high-power density capability, the operation of a 50-kW, 75-kHz all-SiC converter is compared with that of an insulated-gate bipolar transistor-based silicon converter, switching at 25 kHz, each providing 600-V output. The results show that the total losses are reduced by almost 40%, whilst the overall weight is reduced by 27%, achieving a power density of 10.5 kW/kg. Experimental results of the SiC converter operating at 220-600 V, 52.8 kW are provided, showing an efficiency of 97%. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08858993
- Volume :
- 29
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Power Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 101265988
- Full Text :
- https://doi.org/10.1109/TPEL.2013.2273293