Cite
High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers.
MLA
Zhen-Yu Li, et al. “High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-Inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers.” IEEE Journal of Quantum Electronics, vol. 50, no. 5, May 2014, pp. 354–63. EBSCOhost, https://doi.org/10.1109/JQE.2014.2304460.
APA
Zhen-Yu Li, Chia-Yu Lee, Da-Wei Lin, Bing-Cheng Lin, Kun-Ching Shen, Ching-Hsueh Chiu, Po-Min Tu, Hao-Chung Kuo, Wu-Yih Uen, Ray-Hua Horng, Gou-Chung Chi, & Chun-Yen Chang. (2014). High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers. IEEE Journal of Quantum Electronics, 50(5), 354–363. https://doi.org/10.1109/JQE.2014.2304460
Chicago
Zhen-Yu Li, Chia-Yu Lee, Da-Wei Lin, Bing-Cheng Lin, Kun-Ching Shen, Ching-Hsueh Chiu, Po-Min Tu, et al. 2014. “High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-Inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers.” IEEE Journal of Quantum Electronics 50 (5): 354–63. doi:10.1109/JQE.2014.2304460.