A Boosting Pass Gate With Improved Switching Characteristics and No Overdriving for Programmable Routing Switch Based on Crystalline In-Ga-Zn-O Technology.

MLA

Okamoto, Yuki, et al. “A Boosting Pass Gate With Improved Switching Characteristics and No Overdriving for Programmable Routing Switch Based on Crystalline In-Ga-Zn-O Technology.” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 23, no. 3, Mar. 2015, pp. 422–34. EBSCOhost, https://doi.org/10.1109/TVLSI.2014.2316871.

APA

Okamoto, Y., Nakagawa, T., Aoki, T., Ikeda, M., Kozuma, M., Osada, T., Kurokawa, Y., Ikeda, T., Yamade, N., Okazaki, Y., Miyairi, H., Fujita, M., Koyama, J., & Yamazaki, S. (2015). A Boosting Pass Gate With Improved Switching Characteristics and No Overdriving for Programmable Routing Switch Based on Crystalline In-Ga-Zn-O Technology. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 23(3), 422–434. https://doi.org/10.1109/TVLSI.2014.2316871

Chicago

Okamoto, Yuki, Takashi Nakagawa, Takeshi Aoki, Masataka Ikeda, Munehiro Kozuma, Takeshi Osada, Yoshiyuki Kurokawa, et al. 2015. “A Boosting Pass Gate With Improved Switching Characteristics and No Overdriving for Programmable Routing Switch Based on Crystalline In-Ga-Zn-O Technology.” IEEE Transactions on Very Large Scale Integration (VLSI) Systems 23 (3): 422–34. doi:10.1109/TVLSI.2014.2316871.